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We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time. Dual strained channels have been also implemented to enhance mobility for high performance applications.
We reported an investigation of Si-based p-i-n photodetectors with a Ge0.92Sn0.08 active layer grown by molecular beam epitaxy on n-type Si (100) substrate. The spectral response at zero bias shows the cutoff wavelength extends to 2300nm. This work represents a promising technology to develop Si-based photodiodes for short-wave infrared detection.
A 0.23mm-thick grain-oriented silicon steel sheet was successfully produced based on strip casting. The evolutions of microstructure and texture were briefly investigated. It was shown that the as-cast strip exhibited strong {001}<0vw> texture. Goss texture was absent in the hot rolled strip, which was distinct from the well accepted results that Goss texture originated during hot rolling. After...
Optical coupling of scintillators with photodetectors is important to increase the achievable light output. Understanding the angular response of photodetectors is crucial to enhance the light extraction. Losses induced by Fresnel reflections on a Silicon Photomultiplier (SiPM) surface result in an angular dependence of the detected signal on incident light. We built a dedicated test bench at CERN...
This paper presents a novel method for fabrication of silicon nanopore arrays. The proposed method comprises of an inductive coupled plasma (ICP) deep etching and a two-step anisotropic wet etching. A nanopore array with an average feature size of 55 nm and several individual rectangular nanopores with feature sizes as small as 18 nm were successfully obtained using this method. These results indicate...
An implantable Fabry-Pérot interferometer based pressure sensor is developed. The pressure sensor could be integrated directly onto the inlet shell of a left ventricular assist device (LVAD) to monitor blood pressure in real-time and provide a feedback control signal to achieve the optimal operation of LVAD. The diaphragm of the pressure sensor is made out of biocompatible polymer parylene-C.
Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition...
We present a new design procedure for a functional MEMS design and, simultaneously, for safe manufacturing. In order to verify our approach we chose a 2.5 D compliant rotational mirror as an example, which is fabricated in single crystal silicon. The design of this compliant mechanism is based on structural topology optimization with subsequent modification by parameter optimization with a pseudo-rigid-body...
This paper reports on the development and characterization of novel in-plane CMOS-based stress sensors featuring equal sensitivities towards the two mechanical shear stress components sigmaxy = (sigmax'x' - sigmay'y') / 2 and sigmax'y'. The sensor structures are based on symmetric n-well resistors with eight contacts. A geometric parameter variation is performed using FEM simulations to adjust the...
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