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InAs/InGaAs quantum dot mode-locked lasers are fabricated and characterized. The modal gain as the saturable absorber voltage (SAV) changes is investigated. The ground state lasing dominates at low SAV, and excited state transition emerges when SAV increases.
We demonstrate 1.3 µm quantum dot lasers grown directly on (001) silicon substrates without offcut or germanium layers, with thresholds down to 30 mA and lasing up to 90°C. Measurements of relative intensity noise versus feedback show 20 dB higher tolerance to reflections compared to quantum well lasers on silicon.
We describe recent developments on 1.3 μm InAs/GaAs quantum dot lasers epitaxially grown on silicon by molecular beam epitaxy. Record high output powers, lasing temperatures, and operating lifetimes among GaAs based lasers epitaxially grown on silicon have been achieved.
Temperature (20–100 °C) and excitation power (10–700 mW)-dependent photoluminescence (PL) measurements have been carried out on the 1.3 μm GaAs-based InAs quantum dot (QD) laser structures. Rate equation was used to interpret the PL behavior of the QD. The exciton behavior of the carriers in InAs QD has been verified. The excitonic modal gain has been calculated (under exciton picture) and compared...
Large-signal performance of five-stack 1.3 mum InAs/GaAs quantum-dot (QD) lasers has been investigated. Open eye pattern up to 10 Gb/s under direct modulation is demonstrated at 15degC.
We present fabrication of 1.3-µm InAs QD-VCSELs and arrays. The output power of single VCSEL exceeds 1.2 mW. Modulation bandwidth of 2.65 GHz and 2.5 GHz are achieved for single-mode and multi-mode VCSELs. Maximum output power of 28 mW is demonstrated for VCSEL arrays with threshold current of 50 mA.
We assess three methods to increase the gain in quantum-dot-lasers based on increasing the number of dots states and increasing the population of the available states by reducing the effect of the wetting layer
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