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A GaN/SiC hybrid field-effect transistor (HyFET) is proposed as a high-voltage power device that provides a high-mobility lateral AlGaN/GaN channel to reduce the channel resistance and a vertical SiC drift region to sustain the high OFF-state voltage. The performance of the HyFET is evaluated by numerical device simulations. Compared with the conventional SiC MOSFET, the HyFET exhibits a greatly reduced...
A novel GaN/SiC HyFET is proposed as a high-voltage power switch with low ON-resistance and enhanced switching performance. The device combines the merits of SiC vertical devices and GaN lateral HEMTs by utilizing a SiC drift region to sustain high OFF-state voltage and an enhancement-mode AlGaN/GaN heterojunction channel to reduce the channel resistance. Compared with conventional SiC MOSFETs of...
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