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In this work, we investigated the mechanisms of nitride-based passivation (i.e. SiNx and AlN) and their impact on high-voltage switching of AlGaN/GaN heterojunction power transistors with TCAD simulations. It was found that they play a vital role for nitride-passivated devices to simultaneously achieve low dynamic ON-resistance (Ron) and uncompromised breakdown capability. Simulated 2-D electrostatic...
In this work, we report a feasible compact solution to enhance the dynamic performance of GaN-on-Si power devices by integrating a photon source into the drain terminal of a heterojunction field-effect transistor (FET). Photons can be generated from the photonic-ohmic drain (POD) synchronously with turning on of the channel current. These on-chip generated photons can optically pump the electron traps,...
In this work, static and dynamic characteristics of an AlGaN/GaN-on-Si power field-effect transistor (FET) with the integrated photonic-ohmic drain (POD) were systematically investigated. With the photon generation and channel current inherently switched ON and OFF in synchronization, dynamic performances (e.g. dynamic ON-resistance) of the PODFET can be significantly enhanced owing to photon pumping...
Development of III-nitride high-voltage power devices is still challenged by deep traps that are inevitable in state-of-the-art AlGaN/GaN-on-Si epitaxial heterostructures. In this work, we report a heterojunction field-effect transistor featuring a photonic-ohmic drain, i.e. PODFET, on conventional AlGaN/GaN-on-Si power electronics platform. Photons are synchronously generated with the switching channel...
Neutral traps and attractive traps in random telegraph noise (RTN), on both (100)- and (110)-orientated CMOSFETs, are well distinguished and systematically studied for the first time, including both electron and hole traps. It is found that neutral traps energy distributions are higher than attractive traps and, most importantly, neutral traps caused much larger threshold voltage shifts (ΔVth_RTN)...
A novel phase change memory (PCM) cell with Additional Top Electrode (ATE) is introduced to investigate the scaling behavior of the off-state with the dimension of amorphous state region. The electrical conduction in ultra-thin amorphous state layer is investigated. The trap spacing is one of the key parameters that govern the conduction mechanism and threshold voltage in the sub-threshold region...
We report dynamic and microscopic investigations of electrical stress induced defects in a high-k/metal gate stack by electron beam induced current (EBIC). The correlation between dielectric breakdown and EBIC sites are reported. A systematic study was performed on pre-existing and electrical stress induced defects. These defects are successfully visualized. The origin of pre-existing defects is discussed,...
Microscopical investigation of leakage behaviors of Hf-based high-k gate stacks was achieved by means of electron-beam-induced current (EBIC) method. Carrier separated EBIC measurement has found that in non-stressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. The transport mechanisms of electron and...
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