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Organic thin-film transistors (OTFTs) were fabricated using a novel small molecule, C6-NTTN, as the semiconductor layer in several different architectures. The C6-NTTN layer was deposited via both vacuum evaporation at different substrate temperatures and via solution-processing, which yield maximum hole mobilities of 0.16 and 0.05 cm2/${\mathrm{ V}}\cdot {\mathrm{ s}}$ , respectively. Surface treatments...
In this paper we report on the TFT performance of new organic n-channel semiconductors exhibiting very large carrier mobilities (2–3 cm2/Vs for injket-printed TFTs, >10 cm2/Vs for single crystals), exceptional bias tress and thermal stress stability. Finally, flexible EPDs were fabricated using these materials.
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