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Wafer-on-wafer stacking is demonstrated successfully using bump-less Cu-Cu bonding for simultaneous formation of electrical connection, mechanical support and hermetic seal. The mechanical strength of the bonded Cu-Cu layer sustains grinding and chemical etching. Daisy chain of at least 44,000 contacts at 15µm pitch is connected successfully. Cu-Cu hermetic seal ring shows helium leak rate >10X...
Face-to-face stacking of wafer-on-wafer is demonstrated successfully using bump-less Cu-Cu bonding. Using self-assembled monolayer passivation and in-situ desorption, Cu-Cu bond is enhanced in shear strength and bonding uniformity. Excellent specific contact resistance of 0.30 Ω.μm2 is obtained. Continuous daisy chain of at least 6,000 contacts at 15μm pitch is connected successfully. This provides...
Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality [1]. Many challenges arise from the third dimension to successfully achieve excellent electrical and mechanical interconnection by wafer bonding approach. In this work, face-to-face (F2F) stacking of wafer-on-wafer (WoW) is successfully demonstrated...
3D integration by means of face-to-face (F2F) stacking of wafer-on-wafer (WoW) is successfully demonstrated using bump-less Cu-Cu bonding on 200 mm wafers. Cu surface topology is optimized and carefully cleaned prior to bonding. Bonded Cu structures provide sufficient mechanical strength to sustain shear force during wafer thinning. Excellent specific contact resistance of ~0.34 Ω.μm2 is obtained...
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