The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical...
In this paper we review our recent results on optical properties of coaxial nanowires (NWs) based on dilute nitride alloys, such as GaAsN and GaNP. We show that these structures have a high structural and optical quality, and can potentially be used as polarized nano-scale light sources that emit linearly polarized light with the polarization direction perpendicular to the wire axis even in zinc blende...
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
Through Silicon Interposer (TSI) needs to fulfill multi-die stacking in one packaging which can bring high integration density, short interconnection length and small size for next generation devices. Die stacking is a key process in the TSI manufacturing flow, and within that process, die warpage is of central concern. This is because the large warpage of the Si-mterposer induces poor joining of...
A general introduction is presented in this digest to describe configuration, operational theory and technical specifications of the calibration target for FY-3 space-borne microwave humidity sounder of china. The target with the temperature-adjusted function based on PID controller can provide the brightness temperature output form 90K∼350K and its uncertainty is 1.2K∼1.6K (k=2) in 75GHz∼220GHz....
Reliability issues of Pb-free solder joints used in microelectronic interconnects, such as BGA, flip-chip, or even 3D-IC, are becoming more critical recently when high performance electronic systems demand more rigorous reliability requirements. The selection of new solder materials has been an important topic in order to enhance the reliability of Pb-free solder joints. In the past few years, numerous...
When the flip-chip packaging has been moving to the lead-free, fine-pitch and high-current-density packaging, the flip chip with copper-pillar-bump interconnects can provide a solution to this need. However, this package during the thermal cycling test (TCT) still suffers the reliability problems such as delamination at the Cu low-k materials or at the interface between the UBM (under bump metallurgy)...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.