The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Dual metal gate CMOS FinFETs have been integrated successfully by the Ta/Mo interdiffusion technology. For the first time, low-Vt CMOS FinFETs representing on-current enhancement and high-Vt CMOS FinFETs reducing stand-by power dramatically, namely multi-Vt CMOS FinFETs, are demonstrated by selecting Ta/Mo gates for n or pMOS FinFETs with non-doped fin channels. The dual metal gate FinFET SRAM with...
In this paper, Ta/Mo interdiffusion dual metal-gate technology, which has an advantage in realizing dual gate work functions without etching of metals from the gate dielectrics, has been introduced for a FinFET. Gate-first fabrication of the FinFET was successfully implemented by optimizing the deposition and patterning of the Mo and Ta/Mo metal gates on the ultra- thin fin channels. The Ta/Mo-gated...
The Ta/Mo interdiffusion gate technology was introduced into the gate-first FinFET process. The Ta/Mo gated n-MOS and the Mo gated p-MOS FinFET exhibited symmetrical Vth (0.31/-0.36 V), and the scalability down to 100 nm was demonstrated.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.