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Conventional text-based information communications may cause misunderstanding particularly in case of a dialog between different generations, gender or cultural background. Intelligent communications may solve these problems by the aid of “happiness sensor” and retrieving additional information of personal record of the counterparts. Breakthroughs necessary to realize the intelligent communications...
We fabricate and characterize p-channel double quantum dots (DQDs). The DQDs are formed on a silicon-on-insulator (SOI) wafer and integrated with a single hole transistor (SHT) as a charge sensor. We observe charge stability diagram of the DQDs in the characteristic of the charge sensor. Furthermore, few-hole regime in the DQDs is clearly obtained.
Double quantum dots (DQDs) have been studied as attractive candidates for charge qubits. Initially, GaAs-based DQDs formed by means of surface gates depletion were studied because many parameters are tunable after their fabrications [1]. However, silicon-based DQDs are more promising for charge qubits because of the absence ofpiezoelectric electron-phonon coupling, and the effect of phonon localization...
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