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Quantum computing is no longer a future technology. Recent advances in D-Wave computers based on quantum annealing and superconducting devices, and the demonstration of long spin decoherence times in isotopically-enriched Si qubits, have accelerated the research and development of this technology. The remaining challenge is large scale integration of qubits. Physically-defined coupled quantum dots...
We fabricate a serial triple quantum dot (TQD) system, which is made on a silicon-on-insulator (SOI) wafer by dry etching and integrated with single electron transistors (SETs) as charge sensors. We observe charge transitions of a dot in the TQD in the characteristic of the charge sensor which is the furthest to the dot. It implies a SET charge sensor has a capability of sensing of all the charge...
We realized lithographically-defined electrically-tunable silicon quantum dots (Si QDs) without unintentional localized potentials by improving device structures and fabrication techniques. Carrier density was tuned with a top gate and QD-potentials were controlled with the side gates. We succeeded in observing spin-related tunneling phenomena using the double QD device.
The nonvolatile NEMS memory concept is based on the electro-mechanical bistability of the sub-??m-long NEMS structure (Fig. 1). It features a buckled SiO2 bridge which is suspended in the cavity and incorporates the Si nanodots (SiNDs) as single-electron storage. The bridge flips by applying the gate electric field, and its flip-flop motion may be sensed electrically by MOSFET underneath. In this...
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