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We fabricated double quantum dots (DQDs) and a single electron transistor (SET) as a charge sensor (CS) on highly-doped silicon-on-insulator (SOI) substrate. We observed Coulomb oscillations, and Coulomb diamonds in the SET, and estimated its charging energy to be ∼15meV. We detected the change in the number of electrons of the DQDs with the CS, and observed a honeycomb-like charge stability diagram...
We demonstrate that the interplay between local oscillator phase noise and electrical chromatic dispersion compensation induces timing jitter as well as intensity noise. The interplay is investigated in 3000 km-long transmission (accumulated dispersion of 47,000 ps/nm) without optical dispersion compensation.
The band structures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band (H band) and the lower energy band (L band). The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained...
The SEDs with relatively long constriction regions invariably exhibit the MTJ characteristics due to the dopant induced potential fluctuation. We clarified that the formation of such uncontrolled MTJs can be avoided by making the constrictions extremely short and with low surface roughness.
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