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FinFET has become the mainstream logic device architecture in recent technology nodes due to its superior electrostatic and leakage control [1,2,3,4]. However, parasitic capacitance has been a key performance detractor in 3D FinFETs. In this work, a novel low temperature ALD-based SiBCN material has been identified, with an optimized spacer RIE process developed to preserve the low-k value and provide...
This paper reports fabrication of three-dimensional (3-D) hybrid polymer-magnetite nanoparticles with designed asymmetric shapes. The fabrication strategy exploited in this work is to fabricate nanotemplates for positional assembly of target water soluble polystyrene (PS) and iron-oxide (Fe3O4) nanoparticles, producing 3-D hybrid nanostructures as designed. This work has demonstrated 3-D asymmetric...
We present experimentally a novel technique to generate significant and thermodynamically stable second-order nonlinearity into a silica fiber taper by using nanoscale self-assembly of nonlinear molecules on a fiber surface.
Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide band gap. Semiconductor electronic devices and circuits made from SiC are presently being developed for high-temperature, high-power, and high-radiation conditions in which conventional semiconductors can not adequately perform. In this study, 3C-SiC micro-pillar arrays were fabricated on Si substrate by chemical vapor deposition...
This paper discusses the mechanisms responsible for charging of plasma enhanced chemical vapor deposition (PECVD) silicon nitride films used in the fabrication of RF microelectromechanical (MEMS) switches. Nitride films deposited at different temperatures are characterized in order to better understand the effect of deposition conditions on material stoichiometry and stress. Both RF MEMS switches...
Recently, Ge nanocluster or nanocrystal for the next-generation non-volatile memory (NVM) devices has received much attention. Although there is enormous research on the Ge-nanocrystal based NVM, there are few studies on the charging effect on the current conduction in the gate stack. As revealed by this work, the charging has a significant impact on current conduction in the gate stack and thus it...
The paper demonstrates that H atoms diffused into the CVD tunnel oxide degrade the endurance of split-gate type flash EEPROMs. The authors observed that F-N stress application generates high trap densities at the tunnel-oxide/FG interface as well as negative charges in the tunnel oxide. The density of FN-induced traps and charges was found to strongly depend on the liner nitride (SiN) film quality...
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