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In this paper we present the engineering of a non-volatile 1S1R memory based on a Phase-Change Memory cell (PCM), consisting in a GeN/Ge2Sb2Te5 layer, stacked with a GeSe-based Ovonic Threshold Switching selector device (OTS). We optimize and analyze separately the two devices, and we propose for the first time an innovative reading strategy of the cross point device, enabled by the improved sub-threshold...
The quest for the universal memory has been pursued since several years, but as far results from scientific literature do not declare one single technology able to fit all the requirements of the memory hierarchy. Flash and DRAM cover more than 95% of the global sales in the semiconductor memory market [1], but none of the two is able to substitute the other. This appears to be true also for disruptive...
In this paper we investigate the impact of N- doping in optimized Ge-rich Ge2Sb2Te5 materials on device programming and storing performance. We integrate these alloys in state-of-the-art Phase- Change Memory (PCM) cells and we analyze the efficiency of the SET operation in N-doped and undoped memory cells, comparing voltage based programming with current based programming. This aspect is extensively...
In this paper, we investigate the electrical performance of Phase-Change Memory (PCM) devices at high operating temperature (up to 180◦C). We perform a detailed experimental analysis on µtrench PCM cells with different dimensions. We show that the high temperature strongly impacts the programming curves, by linearly decreasing the threshold voltage and decreasing the RESET current. Furthermore, the...
This paper intends to provide an overview of electrical performances of GexTe1−x with different proportions of Germanium or Tellurium for phase-change memories. Germanium-rich as well as Tellurium-rich phase-change materials have been integrated in simple test devices and programming characteristics, data retention and endurance performances are thoroughly analyzed. Tellurium-rich GeTe alloys exhibit...
This paper investigates the electrical performance of Tellurium-rich GexTe1-x (with x = 0.3, 0.4, 0.5) Phase Change Memory (PCM) devices. Analysis performed on lance-type PCM cells showed an increase in threshold voltage and crystallization temperature as the Te content is increased. Furthermore, the current required to program the memory in the high resistive state decreased. The improved stability...
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