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A new quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. This process-oriented nonlinear model accounts for thermal effects, avalanche breakdown and gate conduction. It accurately predicts DC and microwave characteristics...
A new quasi-2-D model for laterally diffused metal–oxide–semiconductor radio-frequency power transistors is described in this paper. We model the intrinsic transistor as a series laterally diffused p-channel and n-type drift region network, where the regional boundary is treated as a reverse-biased -n diode. A single set of 1-D energy transport equations is solved across a 2-D cross section...
A new quasi-two-dimensional physical model is described for microwave LDMOS power transistors. This nonlinear, process-oriented, model accounts for avalanche breakdown, hot carriers and process variations, and accurately predicts DC and microwave characteristics. The model has been applied to the optimization of LDMOS structures and shows good agreement over a wide range of structural variations....
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