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In this paper we present the engineering of a non-volatile 1S1R memory based on a Phase-Change Memory cell (PCM), consisting in a GeN/Ge2Sb2Te5 layer, stacked with a GeSe-based Ovonic Threshold Switching selector device (OTS). We optimize and analyze separately the two devices, and we propose for the first time an innovative reading strategy of the cross point device, enabled by the improved sub-threshold...
We propose a comparative analysis for Ge2Sb2Te5 (GST) and Ge-rich GST based Phase-Change Memory (PCM) devices in terms of program/read disturbs robustness. We present the characterization of the intrinsic drift of the materials, the investigation of the devices response to electrical stress and, finally, the study of the PCM cell behavior in extreme disturb conditions. A higher immunity for Ge-rich...
Among all the new memories concepts, Phase Change Memories (PCM) is one of the most promising. However, various challenges remain. This paper reviews the materials and processes required to face these challenges. As an example, attention will be made on the effect of Phase change material composition on stability of the amorphous phase i.e. on the retention of the information. Additionally, it is...
This paper describes aspects of the power electronics control of wave energy conversion. The objective of the power converter is to drive a switched reluctance linear machine which works as direct-drive power take off (DDPTO) system for a point absorber. FEM analysis and simulations of the electrical machine were taken into account in the design of the converter control strategy. Finally, laboratory...
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