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Junction temperature of SiC DMOSFETs at device failure in unclamped inductive switching test has been estimated to be 960 K, and mechanism of the avalanche failure was discussed. The junction temperature was estimated from the extrapolation of temperature dependence of avalanche voltage. The estimated junction temperature was too low for SiC to behave as an intrinsic semiconductor, which suggests...
The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300V) and large current (40A) were fabricated. In addition, we have succeeded in fabricating the larger current (300A) 4H-SiC trench MOSFET with low-on resistance (2.6mΩcm2). And, regarding high-temperature operation, SiC IPMs can...
The expectation for SiC devices in advanced power electronics applications for saving energy has been still larger. The 4H-SiC planer MOSFETs with high blocking voltage (1300 V) and large current (40 A) were fabricated. In addition, we have succeeded in fabricating the larger current (300 A) 4H-SiC trench MOSFET with low-on resistance (2.6 mΩ cm2). And, regarding high-temperature operation, SiC IPMs...
SiC device is known by its outstanding property, such as low on resistance and short switching time for high voltage device. Recently, the SiC device technology is rapidly progressed; however the device performance in a power conversion circuit has not been clearly shown. The purpose of this work is to apply the SiC device in a DC-DC converter and to evaluate the power loss and efficiency of the converter...
The high current SiC MOSFETs and high-temperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250°C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.
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