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For MeV gamma-ray Astronomy, we have developed an Electron Tracking Compton Camera (ETCC) as a next-generation MeV gamma-ray telescope. An ETCC consists of a three-dimensional electron tracker using a gaseous time projection chamber (TPC) and position-sensitive gamma-ray absorbers using pixel scintillator arrays (PSAs). We carried out the balloon borne experiment in 2006 with a small size ETCC and...
flat image sensor consisting of a Spindt-type field emitter array (FEA) and a high-gain avalanche rushing amorphous photoconductor (HARP) target has been studied with the aim of developing ultrahigh-sensitivity compact television cameras . This image sensor is called an FEA-HARP sensor. The output signal current of the FEA-HARP sensor is obtained by reading out holes that have accumulated on the HARP...
In this paper, an advanced High Voltage (HV) IGBT technology, which is focused on low loss and is the ultimate device concept for HV IGBT, is presented. CSTBTTM technology utilizing “ULSI technology” and “Light Punch-Through (LPT) II technology” (i.e. narrow Wide Cell Pitch LPT(II)-CSTBT(III)) for the first time demonstrates breaking through the limitation of HV IGBT's characteristics with voltage...
We show in this paper a feasibility of self organization of loop neural circuit for memory, association, and abstraction, which is algorithmically realizable. First we assume the memory is composed of loop neural circuit in the cerebral cortex. Then, we give how a memory content expressed by loop circuit shape is copied to blank area of cerebral cortex as well as how a path between memory loops with...
This paper presents ESD protection structure with novel trigger technique for LDMOS based on BiCD process. The proposed ESD protection element includes the same structure as drain region in Nch-LDMOS, the vertical NPN transistor and the lateral NPN transistor. The trigger voltage is depended on the breakdown voltage in the drain region integrated in ESD protection device and the avalanche current...
In this paper, we demonstrate 20 A operation and high switching frequency 980 KHz of single chip DC/DC converter. The fabricated chip consists of the digitally control block, the low on-resistance MOSFET switches and the drivers. The chip adopted low impedance metal bump technology. The on resistance of Nch MOSFET is 4.3m (@drain current=10 A, gate voltage=5 V) comparable to the discrete device. The...
This paper presents a method of low-complexity intra-prediction for H.264/AVC that uses pseudo local decoded image (PLDI). The PLDI is created using a Hadamard transform and used for intra-prediction mode decision. Our experimental results show that the proposed method can reduce the complexity of the intra-prediction process with acceptable losses in picture quality.
The Digital Living Network Alliance (DLNA) works toward a vision of an interoperable network of PCs, home appliances and mobile devices in the home, enabling a seamless environment for sharing and growing new digital media and content services with UPnP technology. However, UPnP device interaction is currently only available in a single local area network (LAN). UPnP gateway technology has been proposed...
This paper introduces a 10 A 12 V single chip digitally-controlled DC/DC converter IC based on the low cost 0.6 um BiCD process. This IC includes the digital pulse width modulator (DPWM) module with the dead-time programmability. The average time resolution is 1.22 ns at the clock frequency 25 MHz on 0.6 um process. This resolution is as same as that for the counter-based DPWM with the clock frequency...
A high performance 0.4μm BiCMOS technology has been developed for fast 16Mb SRAMs. This technology includes a newly developed WIPEC(widely implanted pedestal collector) bipolar transistor. WIPEC can effectively prevent a 2D Kirk effect with minimizing the increase in base-collector junction capacitance. An address access time of 7ns was achieved for a 16Mb BiCMOS SRAM fabricated by using this technology.
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