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ZnO thin films have been deposited on Si (111) substrate by ultrasonic spray pyrolisis (USP) with various growth temperatures. The polycrystalline of ZnO thin films have preferred plane (002) and relatively low donor concentrations comparing with GaN. Optically, photoluminescence (PL) spectra show the UV emission increased with increasing growth temperature. Nevertheless, green emission does not increase...
We report a unidirectional bipolar resistive switching in an n-type GaOx/p-type NiOx heterojunction fabricated by magnetron sputtering at room temperature. The resistive switching (RS) of the heterojunction directly relate with the concentration of intrinsic defects in oxide, such as oxygen vacancies and oxygen ions. Under external electric field, these electromigrated defects accumulate at the pn...
In-Ga-Zn oxide (IGZO) TFTs was fabricated by ink-jet printing technology on a silicon substrate with SiO2 on top. The device fabrication process includes printing ITO electrodes and IGZO semiconductor layer. A typical printed TFT shows a mobility of 0.32 cm2/V s and a contact resistance of ∼1 MΩ. Device performance was further improved by inserting an IZO layer between the source/drain electrode and...
We annealed hydrothermal-grown ZnO nanorods in oxygen and reducing environment (foaming gas) at 450°C and investigated its effect on the performance of dye-sensitized solar cells. The changes in morphology and surface damage due to annealing were not spotted. From photoluminescence and X-ray diffraction spectra, we observed that visible emission related to defect states, especially yellow-green emission...
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