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The anomalous gate-edge leakage current in n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs), which is caused by the encroached growth of nickel silicide across the p-n junction, is first reported. Furthermore, this encroached growth, which is caused by the isotropic and rapid diffusion of Ni atoms during the silicidation annealing, is successfully suppressed by the advanced...
It is reported for the first time that the anomalous gate edge leakage current in NMOSFETs is caused by the lateral growth of Ni silicide toward the channel region, and this lateral growth is successfully suppressed by the control of the Ni silicidation region using the Si ion implantation (Si I.I.) technique. As a result, the anomalous gate edge leakage current is successfully reduced, and the standby...
Nitrogen ion implantation (N2 I.I.) prior to Ni film deposition successfully suppresses the agglomeration of nickel silicide (NiSi) formed on arsenic doped silicon substrate in NMOS region, and drastically improves the thermal stability of its resistivity at narrow lines. Using this technique, lower sheet resistance of NiSi narrow line can be kept at high annealing temperature of 650degC for 30 sec...
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