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We investigate the short-channel performance of trigate silicon nanowire transistors. Drain-induced barrier lowering at a gate length of 25 nm is strongly suppressed by reducing the nanowire width (WNW) down to 10 nm. We found that the parasitic resistance (RSD) of nanowire transistors is dominated by nanowire-shaped source/drain (S/D) regions under the gate spacer whose resistivity is higher than...
The physical mechanisms of electron mobility (??e) enhancement by uniaxial stress are investigated for nMOSFETs with surface orientations of (100) and (110). From full band calculations, uniaxial-stress-induced split of conduction band edge (??EC) and effective mass change (??m*) are quantitatively evaluated. It is experimentally and theoretically demonstrated that the energy surface of 2-fold valleys...
It is shown that sub-0.1 mum Si nanocrystal bulk MOSFET with thin SiN tunnel insulator is a very strong random noise source used in high-rate small-size random number generation circuit, which is required for cryptograph application in mobile network security. A fast random number generation rate of 0.12 MHz is demonstrated using Si nanocrystal MOSFET and a simple small circuit. It is suggested that...
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