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The effects of different parameters on the DC and low-frequency noise performance of four gate field effect transistors (G4-FET) are studied. Experimental data of the drain current and the current noise power spectral density (PSD) are compared with simulation results. The comparisons show that the drain current and its associated noise are very sensitive to the doping profile of the pn junctions...
In this paper the effects of different noise sources in a four‐gate field‐effect‐transistor have been studied and quantified in different operation regimes of the structure. To carry out this study, a model that captures the main features of generation–recombination noise, produced by the fluctuations of trapped charge in the depletion regions of the device, and 1/f noise, produced by the fluctuations...
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