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Dynamic laser stimulation techniques have been developed with success for failure analysis of integrated circuit subjected to ldquosoft defectrdquo. Weakness in design and physical defect can be isolated and located through these methodologies for digital, analog and mixed mode devices. But they are now successfully used embedded in qualification process since they provide accurate information about...
Technology advances in mixed-mode and analog ICs, involving multiple functions inside the device, make Failure Analysis (FA) difficult. Variation Mapping techniques based on Thermal Laser Stimulation (TLS [1],[2],[3]) have already proven their efficiency for the localization of a physical defect or design weakness. Their extension will play a key FA role but the impact of IR laser beam on the basic...
This paper presents a study of the well-known optical beam-induced current (OBIC) technique applied to electrostatic-discharge defect localization. The OBIC technique is improved by using a pulsed laser beam instead of a continuous one. Critical parameters of the experimentation are explored in this paper. We particularly discuss on the influence of the laser energy, the bias of the device under test...
The evolution of laser sources has led to the advent of new laser-based techniques for failure analysis. The pulsed OBIC (optical beam induced current) technique is one of them, which is based on the photoelectric laser stimulation of the device under test (DUT) at a micrometric scale. The suitability of this technique to localize failure sites resulting from electrostatic discharges (ESD) has previously...
Optical techniques (light emission and laser stimulation techniques) are routinely used for precise IC defect localization. At the early stage of an analysis, choosing the right technique is an increasingly complex task. In some cases, one technique may bring value but no the others. Using an 180nm test structure device we present results showing the complementary of emission microscopy (EMMI), time-resolved...
This paper presents the application of picosecond laser ultrasonics for integrated circuit inspection and failure analysis. The technique is described and illustrated with several results. The potential for metal and inter-metal layers metrology in the context of process characterization is illustrated
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