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This paper describes a new concept of Silicon radiation detector with internal multiplication of the charge generated by the incident particle, known as Low Gain Avalanche Detector (LGAD), with a gain in the range of 10–20. The LGAD is addressed to tracking applications for high energy physics with enhanced performances compared to the conventional detectors based on the PiN diode structure. The physical...
This paper presents the evaluation results of low temperature cure dielectrics in terms of process ability, adhesion to Si, SiN, Cu RDL and mold compound substrates. Minimum via opening of 10 μm without residue was achieved for 5 μm dielectric film thickness. Adhesion tests results were conducted based on JEDEC standards for MSL1 and unbiased HAST testing and they demonstrated that the low temperature...
Power consumption has become the biggest challenge in industry for chip design. We will present that by using small reprogrammable embedded FPGAs (eFPGA) coupled with a processor we can achieve power and energy reduction with a very small silicon overhead. Enhancement of computational power helps lowering down frequency (dynamic frequency scaling) to decrease dynamic power. By having same computational...
A new capacitive silicon pressure sensor fabricated by a combination of bulk and surface micromachining is presented. The sensor is composed of a polysilicon membrane that deflects due to the pressure difference applied over it. Its main advantages are a simple fabrication process and an efficient integrability with other devices. The behaviour of the sensor, obtained by mathematical modeling of the...
We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using, for the first time, arsenic as an n-type dopant. The layers are characterised by magnetotransport measurements and SIMS analysis. The latter shows an arsenic concentration in excess of 1019 cm??3 along with strong surface segregation.
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