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This paper presents the evaluation results of low temperature cure dielectrics in terms of process ability, adhesion to Si, SiN, Cu RDL and mold compound substrates. Minimum via opening of 10 μm without residue was achieved for 5 μm dielectric film thickness. Adhesion tests results were conducted based on JEDEC standards for MSL1 and unbiased HAST testing and they demonstrated that the low temperature...
The optimization of the temporary wafer bonding process for thin wafers handling is reported. Two temporary bonding materials are evaluated with two low temperature cure (200degC) dielectrics. TGA results show that the dielectric materials are more stable at high temperature (260degC) with not more than 1% weight loss while the temporary bonding adhesives gave a higher weigh loss of 5.5%. It is found...
The reliability and charging/discharging dynamics of wideband (1.5-14 GHz) phase shifters made of MEMS capacitive switches using Aluminum Nitride (AlN) as dielectric are originally reported. Phase shifter lifetimes exceeding 109 cycles are achieved in hot-cycling (+5 dBm RF power). Dynamic tests were done for the first time under ambient conditions (50% humidity) over 2times109 cycles with no major...
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