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An 80GHz bandwidth distributed amplifier with 7Vpp differential output swing and PO1dB of 13 dBm per side, a 125GHz bandwidth PIN-diode SPST switch with 23dBm output compression point and over 22 dB of isolation up to 160 GHz, and a 40–100GHz bandpass filter with less than 3dB insertion loss are reported in a 90nm SiGe BiCMOS process. The circuits represent critical building blocks for analog transmitter...
We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz fT and 360 GHz fMAX high performance SiGe HBTs, 135 GHz fT and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and...
Scaling both the fT and the fMAX of SiGe HBTs is quite challenging due to the opposing physical device requirements for improving these figures of merit. In this paper, millisecond anneal techniques, low temperature silicide and low temperature contact processes are shown to be effective in reducing the base resistance. These processes when combined with a novel approach to address the collector-base...
This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-μm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz1/2, and a noise figure of 29 dB. The power dissipation of the detector is 75 μW. Reasonable agreement between simulations and measurements is obtained. To...
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