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Scaling both the fT and the fMAX of SiGe HBTs is quite challenging due to the opposing physical device requirements for improving these figures of merit. In this paper, millisecond anneal techniques, low temperature silicide and low temperature contact processes are shown to be effective in reducing the base resistance. These processes when combined with a novel approach to address the collector-base...
Leakage through the base is a common yield detractor in SiGe NPNs. The defects are commonly referred to as dasiapipespsila and are manifested as a current path between emitter and collector independent of base bias. In this article we discuss pipes which have been observed due to retarded base growth. Advanced light/thermally induced voltage alterations (LIVA) and cross section transmission electron...
As the industry continues to aggressively scale CMOS technology, the shift to lower energy ion implantation becomes essential. The consequent shallower amorphous layers result in dopant profiles that are in closer proximity to the end of range (EOR) damage and therefore a better understanding of the interaction between the dopant atoms and the EOR is required. A study is conducted on the influence...
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