The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Due to the continuous CMOS transistor scaling requirements, millisecond annealing has been introduced in 45 nm CMOS technology to enhance dopant activation with minimal dopant diffusion. This paper considers two different ultra fast annealing technologies as alternative to the conventional rapid thermal annealing strategy for the 32 nm node. We compared a long wavelength non-melt laser spike annealing...
In a standard process with a conventional rapid thermal annealing (RTA) stress engineering is a standard feature for advanced CMOS technologies to improve device performance (M. Horstmann et al., 2005). Unfortunately, such an annealing scheme does not meet the 32 nm node requirements due to thermal diffusion and solid solubility limitations. To solve the problem, technologies like flash lamp annealing...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.