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In this work, a modulator driver in a 0.25 µm SiGe:C complementary BiCMOS technology with fT/fmax of 110 / 180 GHz for the npn and 95 / 140 GHz for the pnp transistor is presented. The driver is implemented following an H-bridge topology, taking advantage of the availability of the pnp HBTs, and delivers a differential output amplitude of 3 Vpp to a 50 Ω load. Clear eye diagrams up to 28 Gb/s are...
This paper presents the design and electrical characterization of a transimpedance amplifier (TIA) implemented in a complementary 0.25 µm SiGe:C BiCMOS technology which offers a fT/fmax of 110 GHz/180 GHz for the npn and 95 GHz/140 GHz for the pnp transistor, respectively. Featuring folded cascode architecture by making use of the available pnp HBTs, the amplifier exhibits a differential transimpedance...
This paper describes the technology development activities within the European funding project DOTSEVEN done by Infineon and IHP. After half of the project duration Infineon has developed a 130 nm SiGe BiCMOS technology with fT of 250 GHz and fmax of 370 GHz. State-of-the-art MMIC performance is demonstrated by a 77 GHz automotive radar transmitter. The suitability of IHP´s advanced SiGe HBT module...
Using Si/SiGe CMP in the emitter module of SiGe:C HBT fabrication is an innovative approach in two respects. First, it allows one to simplify the fabrication process, enabling real low-cost HBT modules. Second, it can also be applied to form a fully self-aligned HBT structure, enabling highest RF performance. In this paper, we focus on CMP process optimization. We will show that a previous disadvantage...
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