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Schottky diodes are key elements of RF and terahertz electronics. The design of the lateral Schottky with the contact directly to the side of the electron 2D channel in GaN/AlGaN system provides an advantage of extremely small capacitance and series resistance. The lateral Schottky devices based on high quality GaN/AlGaN heterostructures were grown by molecular beam epitaxy. The current voltage characteristics...
The noise mechanisms in graphene and MoS2 are quite different. The noise characteristics of MoS2 transistors could be described by the McWhorter model. The range of the trap densities responsible for the 1/f noise in MoS2 extracted from the noise measurements is from ∼1018 eV−1cm−3 to ∼ 6×1020 eV−1cm−3. The smallest noise level and smallest trap density was found for multilayer MoS2 transistors with...
We review results of our studies of the low-frequency electronic noise in quasi-1D TaSe3 nanowires of. The semi-metallic TaSe3 is a quasi-1D van der Waals material with an exceptionally high breakdown current density. Our noise studies showed that TaSe3 nanowires have lower levels of the normalized noise spectral density, SI/I2, compared to carbon nanotubes and graphene. The temperature-dependent...
Ballistic electron conduction offers a new possible approach to the development of low-power high-speed logic circuits [1-3]. Ultra-high mobility of graphene allows achieving the ballistic or near-ballistic transport regime at room temperature (RT) in devices with relatively long channels [4-5]. In this presentation, we show that heterostructure field-effect transistors (HFETs) with graphene channel...
We demonstrate that graphene field effect transistors can operate as both plasmonic and bolometric THz sensors depending on polarization and bias configurations. The plasmonic mechanism of detection is consistent with the overdamped plasma wave response. The bolometric regime is caused by the shift of the Dirac point with temperature and reveals the asymmetry in the electron and hole response associated...
The studies of the low frequency noise in graphene transistors with the number of carbon layers from N=1 (single layer graphene) to N=15 showed that 1/f noise becomes dominated by the volume noise when the thickness exceeds approximately 7 atomic layers. We compare these results with the data on surface and volume noise in carbon nanotubes and Si MOS.
Topological insulators is a newly discovered class of materials with the Dirac cone type dispersion at the surface and conventional band in the volume of the material. We present results of the study of the low-frequency excess noise in thin films made of Bi2Se3 topological insulator material. The films were prepared through mechanically cleavage from the bulk crystal via the “graphene-like” exfoliation...
The 1/f noise of three different Ge channel p-type MOSFETs, epitaxially grown on silicon substrates was measured between 1 and 100 Hz. The difference between the p-MOSFETs is the thickness of the interfacial Si layer between Ge channel and gate stack that is needed to passivate the Ge channel. The gate stack consists of SiO2/HfO2/TaN/TiN layers. Noise in all structures complies with the McWorther...
Studies of forward current stress on the low frequency noise in the 4H-SiC high voltage rectifier p+-n diodes revealed that (a) noise is a more sensitive indicator of degradation than IV characteristics, (b) noise could actually decrease with degradation, and (c) degradation mechanism might be linked to stacking faults.
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