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Temperature plays an important role in protein characterization and sensing due to its strong effect on reaction rate. A thermal control microsystem for protein array sensing was developed and tested in a liquid environment. The on-chip microhotplates were implemented in standard CMOS without post-CMOS fabrication for thermal isolation. With only a 5 V supply, up to 45??C can be achieved in liquid,...
Let G(V, E) be a simple graph,k (1 les k les Delta + 1) is a positive integer, f is a mapping from V(G) upsi E(G) to {1, 2,..., k} such that foralluu, uw isin E(G), v ne w, f(uv) ne f(uw); foralluv isin E(G), if d(u) = d(v)then C(u) = C(v); we say that f is the adjacent vertex reducible edge-total coloring of G. The maximum number of k is called the adjacent vertex reducible edge-total chromatic number...
A new signal-selective direction finding algorithm which exploits the property of the cyclostationarity of incoming signals is proposed. After dimensionality reducing by projecting the observed array data onto the signal subspace, the array manifold matrix is identified by the simultaneous diagonalization structure of the matrix pencil consisting of the cyclic correlation matrix and the cyclic conjugate...
The scalability of PN diode and Field Effect Transistor (FETs) as a Phase Change Memory (PCM) driving device is investigated in this work. The study is carried using vertical Gate-All-Around (GAA) MOSFETs with the same cross-sectional channel geometry as the PN diodes. Through extensive 3-D device simulations from 90nm down to 22nm technology node, it is shown that both PN diode and cylindrical GAA...
Sidelobe contribution from off-axis scatterers degrades image quality in ultrasound imaging. Focusing errors resulting from sound-velocity inhomogeneities in tissues, also known as phase aberrations, reduce coherence of the received signals and thus elevates the sidelobe level degrading the contrast resolution. In this study, we proposed a novel adaptive sidelobe-reduction technique using aperture...
In this study, the current driving capability of PN diodes and field effect transistors (FETs) for phase change memory (PCM) applications is investigated. To have a fair comparison, vertical gate-all-around (GAA) MOSFETs with similar cross-section as the PN diodes are selected for comparison. Through extensive 3-D device simulations have been performed based on existing experimental data from the...
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