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This paper presents power integrity modeling, measurement and analysis of a seven-chip stack for through-silicon via (TSV)-based 3D IC integration. A hybrid full-wave and circuit approach, combined with a cascaded scattering matrix technique, is proposed to model the multi-chip stack consisting of TSVs, on-chip power grids and on-chip decoupling capacitors. The hybrid approach leverages the accuracy...
Impact caused by Through-Silicon Via (TSV) induced thermo-mechanical stress on device performance has been a concern for three-dimensional (3D) integrated circuit (IC) integration because of the close proximity of TSVs to semiconductor devices. From the literatures, there are conflicting reports between theory, simulated and experimental results. For realistic and reasonably accurate predictions,...
The trend of increasing digital system performance by downscaling the device size poses daunting challenges in system design due to the increased power density, higher I/O count, interconnect bandwidth, and timing closure requirements. Silicon carrier with Through Silicon Vias (TSVs) or TSI technology is identified as a system and packaging level solution to overcome all those challenges. In this...
Through silicon vias (TSV) are critical vertical interconnects in 3D IC. We comparatively studied the signal integrity of different designs of TSVs both existing and new in a single die up to 20 GHz. For TSVs in multiple die stacking, we proposed to use the cascaded scattering matrix approach for their signal integrity analysis. The results are validated against those from full-path simulation. Compared...
Multi-physics modeling offers rich opportunities for studying the properties of through-silicon vias (TSV). Results of a TSV study with the theories of electromagnetics, semiconductor physics, and thermal physics are presented. Equivalent circuit models are used to draw together the three different theories to perform the TSV modeling. Moreover, a single TSV is examined for high-speed signal transmission...
This paper presents an accurate compact scalable RLCG (Resistance, Inductance, Capacitance, and Conductance) model for electrical modeling of through-silicon vias in 3D IC packaging. Closed-form formulas for R and L are derived by full-wave approach, while C and G are taken from static solutions. The equivalent circuit model can capture almost all the parasitic effects, such as skin, proximity and...
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