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In this paper, we study electromigration (EM) reliability of signal lines. We propose a general model for current conversion from pulsed DC to steady DC based on the consistency of maximal atomic flux divergence. Both long and short lead lines with high frequency current are considered. The calculated effective steady DC agrees with the measured results. Our conversion scheme can be applied also to...
Electromigration (EM) greatly affects the long term reliability of VLSI chips. Not only power/ground (P/G) lines, but also bit-lines of SRAM arrays may be damaged by EM. In this work, we demonstrate that the EM reliability of an SRAM array can be dramatically worsened by process variation due to a significant increase of sub-threshold leakage current on the bit-line. We statistically model the effects...
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