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4,4’-N,N’-dicarbazolebiphenyl (CBP), a wide bandgap organicmaterialwith a lowglass transition temperature, was doped with WO3 or MoO3 through co-deposition and sequential deposition. The doping effects were studied via comparative characterization of hole-only devices and simple green organic light-emitting diodes. Doped films prepared by sequential deposition of alternative 0.5 nm oxide and 3–10...
We present an enhanced version of the SBAS-DInSAR processing chain, which complements the conventional SBAS codes with a simple noise-filtering procedure that allows us to mitigate noise artifacts affecting the sequence of multi-look (multi-temporal) small baseline interferograms used within the SBAS inversion. We demonstrate that the use of such a noise-filtering algorithm permits to significantly...
We report on a novel methodology for fabricating multilayer, high aspect ratio, 3D microfluidic structures with through-layer vias that can be bonded between two hard substrates. It is realized by using a plastic plate embedded PDMS stamp in soft lithography to obtain flat and open PDMS structures that can be stacked to form multiplayer 3D microfluidic networks in high yield without severe structure...
The adoption of lead-free solders accelerates interfacial reaction because they have higher melting points and higher Sn content than the conventional Pb-Sn solders. In this work, we developed a ternary electroless Ni-W-P (6∼7 wt.% P, and 15∼16 wt.% W) alloy to be used as the soldering metallization due to its good thermal stability. Comparison was made with the results obtained from the conventional...
Electrolessly plated Ni-P has been extensively studied due to its high coating uniformity, selectivity and low coating stress. However, the use of lead-free solders accelerates interfacial reaction because they have higher melting points and higher Sn content than the conventional Pb-Sn solders. In this work, we developed a ternary electroless Ni-Sn-P (6~7 wt.% of P and 15~17 wt.% of Sn) alloy to...
The electrolessly plated Ni-P has been extensively studied due to its coating uniformity, selectivity and low coating stress. However, the use of lead-free solders accelerates interfacial reaction because its higher melting points and higher Sn content than the conventional Pb-Sn solders. In this work, we developed a ternary electroless Ni-Sn-P (7~8 wt.% of P and 1.4 wt.% of Sn) alloy to be used as...
The semiconductor-passivating layer interfaces, as well as their dielectric properties, play important and very often dominant roles in determining HgCdTe device performance. In this work, photoconductors were fabricated on p-type mid-wave infrared Hg1-xCdxTe material using molecular beam epitaxy (MBE) grown CdTe film as the passivation layer. In order to emphasize the importance of the CdTe passivating...
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