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The amorphous channel (a-Si:H) TFT-LCD technology dominates the large-area flat panel display (FPD) market, but a-Si:H TFTs propose some adverse characteristics, especially in mobility. Therefore, developing poly-Si TFTs to promote mobility and implement the chip-on-glass (CoG) dream is indeed necessary. Using a green continuous-wave laser on amorphous silicon channel formed as poly-crystallization...
Reported literatures have investigated the effects of pMOSFETs with embedded SiGe source/drain stressor, but devices incorporated with biaxial strain and embedded SiGe source/drain has not been clearly probed. In this study, the characteristics of devices containing biaxial strain and embedded SiGe source/drain stressor as well as different channel lengths were explored. According to the experimental...
Increasing the electrical performance of the MOSFETs with contact etch stop layer (CESL) and SiGe channel technologies in strain engineering is indeed approached. Using silicon capping layer performs the benefits on the smoothness of channel surface and the prevention of germanium penetration from SiGe layer. In this study, the deposited capping layer thicknesses with SiGe channel of (110) substrate...
FinFET devices have the structure of 3-D fins as channels, which are capable of being fully depleted as the gate is biased and potentially suppress the leakage currents. In this paper, one compares poly-silicon gates with fully cobalt silicide gate to see how much they are affected by the fin widths. Two channel lengths (0.1 micron and 0.12 micron) at two different fin widths (namely, 110nm, and 120nm)...
Strained Engineering including both global and local strains effectively enhances the mobility of carriers, in which global strains are generated by the mismatching of lattice constants at the junction of Si and Si0.775Ge0.225 and local strains are aroused by Source/Drain refilled with SiGe. In this paper, junction breakdown voltage, punch-through voltage, and the variation of threshold voltages are...
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