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A high-purity semi-insulator 4H-SiC intrinsic photoconductive switch is presented. The photoconductive semiconductor switch device is fabricated as lateral structures with the electric contact on the same side. The effect of the SiO2 passivation layer has been investigated on the breakdown voltage. The minimum ON-state resistance is 16 $\Omega $ , and the breakdown voltage is 11 kV. A new phenomenon...
A high open-circuit voltage betavoltaic cell based on a SiC pin homojunction is achieved. The open-circuit voltage (0.98V) and the power density (8.0nW/cm2) of the cell are the highest in the all reported SiC betavoltaic cells using 63Ni as irradiation source. The fill factor (FF) of the cell (74%) is the highest in all of the wide band gap semiconductor betavoltaic cells, including SiC and GaN.
With isothermal annealing treatment at 1873 K, unintentionally doped 4H-SiC epitaxial layers grown by low-pressure chemical vapor deposition (LPCVD) have been studied using electron spin resonance (ESR) and low temperature photoluminescence (PL). ESR and PL spectra show that the native defects are the mixture of carbon vacancy (VC) and its extended point defects. The decrease of key parameter g vector...
With Vanadium ion implantation semi-insulating 4H-SiC layer has been investigated. For n-type and p-type 4H-SiC, resistivities have been reached 7.6times106middotcm and 1.6times1010middotcm respectively after 1650degC annealing. Perfect surface morphology has been observed using a simple Carbon coating film protection. The Vanadium energy levels in forbidden band of n-type 4H-SiC were confirmed as...
An array of TLM(transfer length method) test patterns is formed on N-wells created by P+ ion implantation into Si-faced p-type 4H-SiC epilayer. The Ge+ ion implantations are used to form the intermediate semiconductor layer (ISL) of nickel-metal ohmic contacts to n-type 4H-SiC. The specific contact resistance pc as low as 4.23 times 10-5 Omegacm2 is achieved after annealing in N2 at 800 degC for 3...
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