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Silicon nitride spot-size converters were fabricated in a damascene process to improve the performance of supercontinuum generation in arsenic-free chalcogenide waveguides. Supercontinuum generation covering 950–1750 nm with 200 pJ pulses is demonstrated.
We demonstrate room-temperature transparency and optically pumped lasing with an InGaAs quantum well active region integrated in an InP nanoresonator cavity grown monolithically on silicon. As-grown silicon transparent lasers will enable on-chip optical interconnects.
We have grown and fabricated InGaAs active region, InP clad nanopillar diodes at deterministic positions on silicon using selective area epitaxy. Room temperature radiative dominant electroluminescence at 1460 nm wavelength is reported from these devices.
We proposed, fabricated, and characterized new structures based on III-V compound semi-conductor nanopillars, monolithically integrated to silicon platform, for coupling spontaneous and stimulated emission to silicon waveguides.
We report on wafer-scale processing of GeSbS-based chalcogenide waveguides on silicon substrates. High Q-factor (106), low propagation loss (0.2 dB/cm), and supercontinuum generation in a 2-cm-long waveguide with 120 pJ pulses are demonstrated.
We demonstrate catalyst-free metal organic chemical vapor deposition (MOCVD) growth of position-controlled InP nanopillars on Si substrates for the first time. The nanopillars were grown at a low growth temperature of 460°C, compatible with CMOS back-end integration and resulting arrays of nanopillars show high yield of ∼97%. Nanopillars grow vertically, in single-phase, wurtzite crystalline form...
We demonstrate InP nanopillar bipolar junction phototransistors monolithically integrated on a Silicon substrate. With a responsivity of 4 A/W and bandwidth of 7.5 GHz, these receivers indicate a route towards efficient on-chip optical interconnects.
A design rule to obtain broadband high reflection and transmission in 2D high contrast gratings is proposed. Our design method is convenient for engineering the orbital angular momentum of light using 2D grating array.
We present a novel label-free biosensor key to which is a Si-based high-contrast grating resonator with Q∼3000. The biosensor is coupled to a single-mode fiber and is shown to detect target proteins with a sensitivity of 100pg/ml.
We demonstrate four-wave mixing using a Si-based high contrast gratings (HCG) resonator directly coupled in surface-normal direction. Quality-factor of the resonator is ∼7000 and peak conversion efficiency is −19.5dB at low pump power levels.
We demonstrate a 1550-nm broadband self-swept VCSEL with 23-nm wavelength range at 131 kHz sweep rate. The mechanical oscillation of the ultra-lightweight HCG top mirror is excited optomechanically by photons inside the lasing cavity.
This chapter provides an in‐depth analysis of the high contrast grating (HCG), which can lead to physical insights of the extraordinary properties. It explains a vast range of the peculiar phenomena and applications of HCG under both surface‐normal incidence and oblique incident angle. The chapter shows that HCG can be easily designed using simple guidelines, rather than requiring heavy numerical...
Using high quality, single crystalline InP nanowire grown on silicon substrate, we demonstrates sensitive avalanche photodiode with 26.6 A/W and bipolar junction phototransistor with 4 A/W integrated onto silicon substrate. The avalanche photodiode has unique radial p-n junction that allows it to reach a high avalanche gain of 100 at a low bias of 1 V. The bipolar junction phototransistor integrates...
We report an optical phased array (OPA) using high-contrast-grating (HCG) as an electrostatically actuated mirror for the purpose of free space fast beamsteering. In this paper, several attractive properties of HCG mirror are introduced such as single material, high reflectance along a wide bandwidth and low-mass inertia and the fabrication result is shown. ±10° × 10° with 2° beam width is observed...
We demonstrate closed-loop control of a MEMS phased array using an optical interferometer designed for in-situ phase-measurement. Phase resolution is comparable with commercial interferometers and we achieve beamsteering without calibration.
We demonstrate III–V avalanche photodiodes monolithically integrated onto silicon by CMOS-compatible growth. With bandwidth exceeding 3 GHz and gain as high as 28, nanopillar devices showcase the viability of bottom-up III–V nanomaterials for high-performance optoelectronics.
A completely new class of planar optics has emerged using subwavelength metastructures with a large index contrast. Uniform and chirped gratings can be used to create high reflection mirrors, high-Q resonators with surface-normal output, hollow core waveguide, vertical to in-plane waveguide coupler, and focusing reflectors and lenses.
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