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We reported a wafer level through-stack-via (TSV) integration approach for stacked memory module using onetime bottom-up copper filling. This bumpless TSV integration approach simplified the fabrication process and provided better reliability compared with solder based technologies. Silicon wafer with blind vias was first bonded to a carrier wafer face to face with pre-patterned BCB, and then thinned...
In this paper, the potential application of combining cylindrical TSV and annular TSV into 3D integration was studied. First, the schematic fabrication process of cylindrical and annular TSV was proposed. Lumped equivalent circuit model of these different kinds of TSV structures from the physical configuration were studied and verified. Besides, 3D full wave electromagnetic (EM) simulations of cylindrical...
As the speed of digital systems continues to increase, digital design has entered a new realm that requires high integration and high complexity with limited dimension. Different from the parameter analysis in low frequency which mainly focuses on resistances and their effects, the coactions of resistances, inductances and capacitances are all needed to be taken into account in high frequency. This...
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