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We present a 20-Gbit/s ASK wireless system in the 300-GHz band for kiosk data downloading. The front-ends (transmitter and receiver) are manufactured by using InP-based monolithic microwave integrated circuits with high electron mobility transistors. We successfully demonstrate 20-Gbit/s data transmission using these front-ends at link distances from 50 cm to 1 m. The measured bit error rate is less...
We developed high-speed III-V devices for millimeter-wave receiver applications as InP-based high electron mobility transistors (HEMTs) that had a cavity structure and zero-bias GaAsSb-based heterojunction backward diodes. A high cutoff frequency fT) of 517 GHz and minimum noise figure (NFmin) of 0.71 dB at 94 GHz were achieved for the InP-based HEMTs, even after the passivation process, by adopting...
The sub-millimeter wave amplifier MMIC with flip-chip mounting on polyimide substrate has been realized. The thickness of the substrate and the pitch of GND vias are designed to suppress the air radiation from the slot pattern in the substrate. The test results of the micro-strip line formed on the polyimide substrate shows that the design is applicable to the assembly operated up to 320 GHz. The...
In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.
This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105...
This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105...
This paper describes the use of InP HEMT technology to develop sub millimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between...
This paper describes the use of InP HEMT technology to develop submillimeter-wave amplifier circuits. The amplifiers are designed using common-gate amplifiers with series inductors, which achieve both high gain and wide bandwidth. Two submillimeter-wave amplifiers are designed. One is a D-band amplifier that achieves a small-signal gain of 15 dB at 160 GHz and a −3 dB bandwidth of 89 GHz between 105...
A novel ultra-wideband impulse radar architecture for 24-GHz-band short-range radar was developed using 0.13-mum InP high electron-mobility technology. The transmitter part generates an extremely wideband impulse from a pulse generator and then filters it through a bandpass filter. The obtained impulse had a full width at half maximum of 9 ps. Its frequency spectrum spread from dc to over 40 GHz and...
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