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A dopant-segregated Schottky barrier MOSFET is simulated by Monte Carlo method in this paper. The feature that dopant-segregated structure can improve on-current is revealed. The influence of dopant-segregated structure parameters on device performance is investigated, and the guideline for device design optimization is that the dopant-segregated region should overlay the whole Schottky barrier region...
In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it...
In this paper, we performed a simulation on a 45-nm UTB SOI Schottky Barrier MOSFETs using our two dimensional Ensemble full band Monte Carlo simulator to evaluate the effect of scattering in Schottky Barrier MOSFETs (SB FETs). The carrier transport details for both ballistic case and scattering case are simulated and analyzed. The scattering plays a less important role on the performance in SB FETs...
The impact of gate misalignment on the performance of dopant-segregated Schottky Barrier MOSFET (DS SBTs) and on the carrier transport is investigated by Monte Carlo method. The simulation results show that gate misalignment with dopant-segregated structure (DSS) has less significant impact on drain current than that without DSS. The influence of gate misalignment with DSS becomes notable only when...
In this paper, an analytical 2D current model of Double-Gate Schottky-Barrier MOSFETs (DG SB MOSFETs) is developed, which takes the advantage of the 2D potential distribution. Simulation results have shown that current density undergo notable changes along the channel depth directions, indicating that Ids and Vth calculated by 2D current model achieve a better accuracy than Surf model.
Recently a novel device structure called dopant-segregated Schottky barrier MOSFETs (DSS SBTs) has been proposed where the Schottky barrier height can be significantly reduced thus achieving much larger drain currents. Although quite a few experimental studies have been performed on this structure, further investigation on the carrier transport mechanism is required for the optimization of device...
A new structure of double gate SB MOSFET in which one of the gates is used to modulate the electric potential distribution (back gate modulated SB MOSFET) is proposed and compared with conventional double gate SB MOSFET and UTB SB MOSFET in terms of off state leakage current, on state current and minimum current, as well as sub-threshold slope(S). The mechanism of SB MOSFET leakage current in off...
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