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The improvement of the intrinsic high-frequency performance of emerging transistors is commonly based on reducing electron transit time and it is pursued by either reducing the channel length or employing novel high-electron-mobility materials. For gate-all-around transistors with lateral dimensions much shorter than their length, a careful analysis of the total time-dependent current shows that a...
The aim of this work is to show the dependence of the time dependent current of gate-all-around transistors on their geometries and thus to find out how to optimize their intrinsic AC behavior. The Ramo-Shockley-Pellegrini (RShP) theorem and many-particle Monte Carlo technique are used, through the recently developed BITLLES simulator which is devoted to simulate classical and quantum electronic devices,...
An accurate formulation of the electric power in ballistic (classical or quantum) nanoscale devices is presented. The redefinition of the electric power is computed within a many-electron framework (where the dynamic of each electron is determined by its own electric field). The traditional definition of the electric power is compared with the new reformulation presented here for classical double-gate...
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