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The double taper-type mode convertor for direct bonded GaInAsP/SOI hybrid photonic devices was proposed and the characteristics of the fabricated structure using plasma activated bonding were measured. The calculated and measured results showed the coupling efficiencies of 90% and 75%, respectively.
Bonding conditions and characteristics of N2-plasma activated bonding for GaInAsP/SOI hybrid lasers are explained. SEM and TEM images reveal high quality bonding interface and less damage quantum wells, which are enough to realize hybrid lasers.
Low temperature wafer scale direct bonding technology using plasma activated bonding (PAB) for heterogeneous photonic device integration is reviewed. Nitrogen plasma irradiation in a high vacuum chamber allows tight strength bonding between InP-based and SOI wafers with the bonding temperature of 150°C as well as low damage to GaInAsP quantum wells (QWs). In contrast Argon irradiation cause poor bonding...
The in-plane and interlayer waveguide-type couplers between crystalline Si and amorphous-Si:H wire waveguides, for 2D/3D hybrid-material integration are presented in this paper. The in-plane-type coupler achieves stable coupling between two waveguides by using tapers located at the tips of the waveguides. The interlayer-type coupler can connect two waveguides, despite an interlayer distance of 1 μm,...
We realized GaInAsP/SOI hybrid Fabry-Pérot (FP) laser with AlInAs-oxide current confinement structure for PICs on a silicon platform. Using hybrid wafers by a plasma activated bonding technique, an AlInAs layer just above GaInAsP quantum wells was oxidized by wet oxidation. A threshold current of 50 mA and an external differential quantum efficiency of 11%/facet were obtained with the unoxidezed stripe...
Novel configuration of multi-functional SOA array by III–V/Si hybrid technique using one-time III–V/Si wafer bonding is proposed. A III–V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.
A GaInAsP/Si hybrid Fabry-Perot laser, fabricated by low temperature N2 plasma surface activated bonding on a Si substrate, was demonstrated. Lasing operation at room temperature was realized with a threshold current density of 0.85 kA/cm2.
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