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A GaAs-InGaAs optoelectronic switch, grown by molecular beam epitaxy (MBE), has been fabricated. Owing to the avalanche multiplication and hole accumulation in the transport mechanism, bistable states, i.e., a high-impedance OFF state and a low-impedance ON state, are observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the potential barrier...
An optoelectronic switch with both n- and p-type delta-doped (delta-doped) quantum wells was investigated. The delta-doped structures formed potential wells for the carrier accumulation and potential barriers for the carrier injection. Being possessed of delta-doped sheets with different doping levels, the potential barriers were sequentially collapsed to produce a double negative-differential-resistance...
A Schottky-contact triangular-barrier optoelectronic switch (STOS), grown by molecular beam epitaxy (MBE), has been fabricated. The triangular barrier, formed by inserting an InGaAs delta-doped (delta-doped) quantum well into an n -GaAs layer, provides a potential well for hole accumulation. Due to the hole accumulation in the delta-doped well and the sequential avalanche multiplications in the reverse-biased...
Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of...
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