Search results for: J.E. Velázquez

Items from 1 to 20 out of 21 results

article

Comparative study of single cultures and a consortium of white rot fungi for polychlorinated biphenyls treatment

S.F. Benitez, M.A. Sadañoski, J.E. Velázquez, P.D. Zapata, more

Journal of Applied Microbiology > 131 > 4 > 1775 - 1786

Aims To evaluate the mycoremediation of polychlorinated biphenyls (PCBs) by either single cultures or binary consortia of Pleurotus pulmonarius LBM 105 and Trametes sanguinea LBM 023. Methods and Results PCBs tolerance, removal capacity, toxicity reduction and ligninolytic enzyme expression were assessed when growing single culture and binary consortium of fungus in 217 mg l⁻¹ of a technical mixture...

article

Bioproduction of α‐terpineol and R‐(+)‐limonene derivatives by terpene‐tolerant ascomycete fungus as a potential contribution to the citrus value chain

J.E. Velázquez, M.A. Sadañoski, P.D. Zapata, N.A. Comelli, more

Journal of Applied Microbiology > 130 > 1 > 76 - 89

Aims The aims of this article were to select fungal species with high tolerance and high growth rate in mediums supplemented with limonene and citrus essential oils (CEOs), and to test the bioconversion capability of the chosen isolates for the bioproduction of aroma compounds. Methods and Results Based on the use of predictive mycology, 21 of 29 isolates were selected after assaying R‐(+)‐limonene...

article

Continuous output integral sliding mode control for switched linear systems

R. Galván-Guerra, L. Fridman, J.E. Velázquez-Velázquez, S. Kamal, more

Nonlinear Analysis: Hybrid Systems > 2016 > 22 > C > 284-305

A continuous output integral sliding mode robustification methodology for switched uncertain linear time invariant systems with state-dependent location transitions and dwell time is presented. The robustifying methodology is based on the adjustment of the super-twisting algorithm gains to assure the convergence time and the attenuation of the chattering. The use of the adjusted STA allows to reconstruct...

article

Mechanisms of the thermal electromotive force, heating and cooling in semiconductor structures

O.Yu. Titov, J.E. Velazquez-Perez, Yu.G. Gurevich

International Journal of Thermal Sciences > 2015 > 92 > C > 44-49

A comprehensive study of the mechanisms of the thermal electromotive force, heating and cooling originated by a temperature gradient and an electric current in semiconductor devices is reported. The Seebeck, Peltier, Joule and Thomson phenomena are studied self-consistently under the approximation of weak electric current and temperature gradient. Analytical calculations show that the contributions...

article

Terahertz imaging using strained-Si MODFETs as sensors

Y.M. Meziani, E. Garcìa-Garcìa, J.E. Velázquez-Pérez, D. Coquillat, more

Solid State Electronics > 2013 > 83 > Complete > 113-117

We report on non-resonant (broadband) and resonant detection of terahertz radiation using strained-Si modulation doped field effect transistors. The devices were excited at room temperature by two types of terahertz sources (an electronic source based on frequency multipliers at 0.292THz and a pulsed parametric laser at 1.5THz). In both cases, a non-resonant response with maxima around the threshold...

chapter

Hybrid Recurrent Neural Network for Nonlinear Hybrid Dynamical Systems Identification

J.E. Velazquez-Velazquez, R. Galvan-Guerra, I.S. Baruch

2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control > 1 - 6

2011 8th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE 2011)

This paper is devoted to the development of a Neural Network Hybrid Identification Framework for unknown Nonlinear Hybrid Dynamical Systems. The proposal is based in the well known Recurrent Trainable Neural Networks Identifiers. In a first instance, the unknown hybrid system is considered like a black-box where by using only hybrid input-output data an approximated model is found. In a second instance,...

chapter

An approach to optimization of linear networked systems based on the hybrid LQ methodology

R. Galvan-Guerra, V. Azhmyakov, J.E. Velazquez-Velazquez, A. Poznyak

2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE) > 1 - 6

2009 6th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE 2009)

This paper deals with an optimal design of linear networked control systems. We study a class of delayed dynamical systems in the continuous time-domain and propose an optimization approach based on the newly elaborated hybrid LQ-type techniques. Moreover, we develop an explicit connection between the given networked control processes and auxiliary hybrid models. The optimal feedback control strategy...

article

Lyapunov–Krasovskii functionals for scalar neutral type time delay equations

J.E. Velázquez-Velázquez, V.L. Kharitonov

Systems & Control Letters > 2009 > 58 > 1 > 17-25

In this paper a procedure for construction of complete type Lyapunov–Krasovskii functionals for a scalar neutral type time delay equation is considered. The construction of the functionals depends on the so-called Lyapunov functions which satisfy a delay equation with additional boundary conditions. It is shown that these functionals admit lower and upper quadratic bounds. Exponential estimates for...

article

Transport boundary conditions for solar cells

I.N. Volovichev, J.E. Velázquez-Pérez, Yu.G. Gurevich

Solar Energy Materials and Solar Cells > 2009 > 93 > 1 > 6-10

Boundary conditions (BCs) to the Poisson and transport equations for stationary transport processes of nonequilibrium carriers in semiconductor structures, including solar cells, are formulated. The applicability of the resulting BCs for solar cells consisting of several various materials (metals, bipolar semiconductors, including ones in the quasineutrality approach) and their structures are analyzed...

chapter

Robust stability analysis of a class of neutral type time delay equations

J.E. Velazquez-Velazquez, V.L. Kharitonov, S. Mondie

2008 47th IEEE Conference on Decision and Control > 4646 - 4651

2008 47th IEEE Conference on Decision and Control

In this contribution the robust stability of a class of linear neutral type time delay equations with bounded uncertain coefficients is analyzed via Lyapunov-Krasovskii functionals of complete type. For any exponentially stable nominal systems, we are able to present bounds on the uncertainties that guarantee the stability of the perturbed system. The quadratic Lyapunov-Krasovskii functionals of complete...

article

Transport boundary condition for semiconductor structures

I.N. Volovichev, J.E. Velázquez-Perez, Yu.G. Gurevich

Solid State Electronics > 2008 > 52 > 11 > 1703-1709

Boundary conditions (BCs) to the Poisson and transport equations for stationary transport processes of non-equilibrium carriers in semiconductor structures are formulated. The applicability of the resulting BCs for several materials (metals, bipolar semiconductors, including ones in the quasineutrality approach, QNA) and their structures are analyzed for both closed and open circuits. As a first step,...

chapter

New boundary conditions for the study of charge transport in solid-state devices

I.N. Volovichev, J.E. Velazquez-Perez, Yu.G. Gurevich

2008 26th International Conference on Microelectronics > 151 - 154

2008 26th International Conference on Microelectronics

Boundary conditions to the Poisson and transport equations for stationary transport processes of nonequilibrium carriers in semiconductor structures, including solar cells, are formulated. The applicability of the resulting boundary conditions for solar cells consisting of several various materials (metals, bipolar semiconductors, including ones in the quasineutrality approach) and their structures...

article

Unipolar rectifying silicon nanowires—TCAD study

K. Fobelets, J.E. Velazquez-Perez

Physica E: Low-dimensional Systems and Nanostructures > 2008 > 40 > 7 > 2481-2484

Due to the large surface to volume ratio in nanowires, small changes in surface condition result in large changes in current–voltage characteristics. As a consequence, the overlap of the end-wire contact with the oxide-covered surface along the length of the nanowire can have a significant effect on the current–voltage characteristics of the wire. We present TCAD studies of this effect. One of the...

chapter

Single Device Logic using 3D Gating of Screen Grid Field Effect Transistors

Y. Shadrokh, K. Fobelets, J.E. Velazquez-Perez

2007 International Semiconductor Conference > 1 > 45 - 48

2007 International Semiconductor Conference, CAS 2007

The screen grid field effect transistor (SGrFET) is an oxide-gated FET with a novel 3D gating configuration perpendicular to the current flow in the channel. The multiple gate character of the SGrFET lends itself perfectly to compact logic applications with a reduced number of devices per gate. In this report TCAD results of both DC and transient performance of double-gate row SGrFET logic are presented...

article

A novel 3D embedded gate field effect transistor – Screen-grid FET – Device concept and modelling

K. Fobelets, P.W. Ding, J.E. Velazquez-Perez

Solid State Electronics > 2007 > 51 > 5 > 749-756

A novel 3D field effect transistor on SOI – screen-grid FET (SGrFET) – is proposed and an analysis of its DC behaviour is presented by means of 2D TCAD analysis. The novel feature of the SGrFET is the design of 3D insulated gate cylinders embedded in the SOI body. This novel gate topology improves efficiency and allows great flexibility in device and gate geometry to optimize DC performance. The floating...

chapter

Kinetic approach to the heating of electrons and phonons in semiconductors

Yu.G. Gurevich, O.Yu. Titov, G.N. Logvinov, J.E. Velazquez-Perez

2006 3rd International Conference on Electrical and Electronics Engineering > 1 - 4

2006 3rd International Conference on Electrical and Electronics Engineering

A general approach to the study of the energy exchange between hot electrons and phonons is presented. We present a discussion on the choice of the most suitable kinetic model to theoretically investigate the transport of both hot electrons and hot phonons. All of these kinetic models are based on the calculation of the symmetric part of the non-equilibrium distribution functions in the form of the...

chapter

Space Charge and Transport of Nonequilibrium Carriers in Bipolar Semiconductors

Yu.G. Gurevich, J.E. Velazquez-Perez, O.Yu. Titov

2006 3rd International Conference on Electrical and Electronics Engineering > 1 - 4

2006 3rd International Conference on Electrical and Electronics Engineering

In this work we present results concerning the fundamental equations of charge carrier transport in semiconductor structures. We discuss a correct modeling of the recombination terms that do not violate the charge conservation law. We obtained that under stationary conditions and equal generation rates of electrons and holes the recombination rates of both kinds of carriers must be matched. Under...

chapter

Transport of Non-Equilibrium Charge Carriers in Bipolar Semiconductor Materials

Y.G. Gurevich, J.E. Velazquez-Perez

2006 25th International Conference on Microelectronics > 317 - 320

2006 25th International Conference on Microelectronics

In this work we present results concerning the fundamental equations of charge carrier transport in semiconductor structures. We discuss the modeling of the recombination term in the charge transport equations for each type of carriers that respects the charge conservation law. It was obtained that under stationary conditions and equal generation rates of electrons and holes the recombination rates...

chapter

A Novel 3D Embedded Gate Field Effect Transistor: Device Concept and Modelling

K. Fobelets, P.W. Ding, J.E. Velazquez-Perez

2006 25th International Conference on Microelectronics > 455 - 458

2006 25th International Conference on Microelectronics

A novel 3D Field Effect Transistor on SOI - the screen grid FET (SGFET) $for ultra-low power applications is proposed and TCAD analysis of the device is presented. The device is designed with the aim of decoupling the need for aggressive scaling of the gate oxide thickness when reducing the channel length. Other scaling objectives are: retaining low doping in the channel, maintaining the drain conductance...

article

Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

K. Fobelets, W. Jeamsaksiri, C. Papavasilliou, T. Vilches, more

Solid State Electronics > 2004 > 48 > 8 > 1401-1406

The measured performance of sub-micron Si:SiGe Schottky gated HFETs is compared to Si nMOSFETs. To allow an up-to-date comparison between Si and strained-Si FETs, the different device types have been studied in their respective technologies. RF performance as given by the cut-off and maximum oscillation frequency is given as a function of input power. The evaluation highlights the current immaturity...

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Search results for: J.E. Velázquez

Comparative study of single cultures and a consortium of white rot fungi for polychlorinated biphenyls treatment

Bioproduction of α‐terpineol and R‐(+)‐limonene derivatives by terpene‐tolerant ascomycete fungus as a potential contribution to the citrus value chain

Continuous output integral sliding mode control for switched linear systems

Mechanisms of the thermal electromotive force, heating and cooling in semiconductor structures

Terahertz imaging using strained-Si MODFETs as sensors

Hybrid Recurrent Neural Network for Nonlinear Hybrid Dynamical Systems Identification

An approach to optimization of linear networked systems based on the hybrid LQ methodology

Lyapunov–Krasovskii functionals for scalar neutral type time delay equations

Transport boundary conditions for solar cells

Robust stability analysis of a class of neutral type time delay equations

Transport boundary condition for semiconductor structures

New boundary conditions for the study of charge transport in solid-state devices

Unipolar rectifying silicon nanowires—TCAD study

Single Device Logic using 3D Gating of Screen Grid Field Effect Transistors

A novel 3D embedded gate field effect transistor – Screen-grid FET – Device concept and modelling

Kinetic approach to the heating of electrons and phonons in semiconductors

Space Charge and Transport of Nonequilibrium Carriers in Bipolar Semiconductors

Transport of Non-Equilibrium Charge Carriers in Bipolar Semiconductor Materials

A Novel 3D Embedded Gate Field Effect Transistor: Device Concept and Modelling

Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

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