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In this paper, a new negative-differential-resistance (NDR) effect and a novel collector-current kink effect are investigated in the cryogenically operated SiGe heterojunction bipolar transistors (HBTs). Theory based on an enhanced positive-feedback mechanism associated with heterojunction barrier effect at deep cryogenic temperatures is proposed to explain both the observed NDR and the collector-current...
This paper explores SiGe profile optimization for improved cryogenic operation at high injection. Through analyzing distributive transit time profiles, the bottle neck limiting high injection fT is identified and then eliminated in an optimized profile design. The fabricated profile indeed shows considerably improved fT and beta at high injection
We present the first investigation of the optimal implementation of SiGe BiCMOS precision voltage references for extreme temperature range applications (+120 degC to -180 degC and below). We have developed and fabricated two unique Ge profiles optimized specifically for cryogenic operation, and for the first time compare the impact of Ge profile shape on precision voltage reference performance down...
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