The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
CMOS transistor reaches physical and electrical limitations technology passes through the critical 90 nm gate size. Scaling down linearly to 35nm, the transistor electrical characteristics behave even more unpredictable. This can be seen with leakage current increasing exponentially as the physical size reduced linearly, mainly caused by the short channel effect. As a result, the threshold voltage...
Taguchi method was used to optimize of the effect process parameter variations on threshold voltage in 45nm NMOS device. In this paper, there are four process parameters (factors) were used, which are Halo Implantation, Source/Drain (S/D) Implantation, Oxide Growth Temperature and Silicide Anneal temperature. The virtual fabrication of the devices was performed by using ATHENA module. While the electrical...
Taguchi method was used to analyze the experimental data in order to get the optimum average of silicide thickness in 45nm devices. The virtually fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. These two modules were used as design tools and helps to reduce design time and cost. In this paper,...
The characteristics of high performance 45 nm pMOS devices based on International Technology Roadmap for Semiconductor (ITRS) have been studied using ATHENA and ATLAS's simulator. There are four factors were varied for 3 levels to perform 9 experiments. The factors are halo implantation, Source/Drain (S/D) implantation, oxide growth temperature and silicide anneal temperature. In this paper, Taguchi...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.