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Hybrid systems combine Large-Area Electronics (LAE) with high-performance technologies (e.g., silicon CMOS) [1]. With architectural concepts for hybrid systems broadening to match the range of emerging applications, this paper examines modular approaches for multi-sheet, multi-technology integration. It identifies the interfaces required as a critical backbone. For interfaces associated with various...
The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures $>800\ ^{\circ}\hbox{C} $, often for a period of several hours. Here, we present a low-temperature (400...
We review our recent work showing that Si and InP Mach-Zehnder modulators can have similar performance, while the first offer the advantage of monolithic integration with electronics. Development status of modulators in photonic BiCMOS is presented.
SiGe HBT is a key device for BiCMOS process used for high-speed communication, automotive radar and defense military. For normal SiGe process, the control of emitter window undercut is often not easy. In this paper, we studied the influence of emitter undercut on HBT parameters, through both TCAD simulation and wafer results. While transistors with larger area-to-perimeter ratio are supposed to have...
We present our recent work on high speed silicon optical modulators developed within the UK silicon photonics and HELIOS projects. Examples of their integration with other photonic and electronic elements are also presented.
We present results for FEOL integration of Silicon electro-optic waveguides with high-performance BiCMOS technology. The new technology allows for dense co-integration of high-speed analogue RF circuits and Silicon modulators.
We present modulators developed in the projects “HELIOS”, and “UK Silicon Photonics”, integration with modulator driver to produce the first silicon modulator fully integrated with BiCMOS, and multiplexed photonic crystal modulators for ultra-low power operation.
In this work we present optical modulation at both 40Gbit/s and 50Gbit/s from a carrier depletion based device in silicon. The modulator can be fabricated using a self-aligned process aiding performance reliability and device yield.
We designed and experimentally demonstrated two new types of self-imaging MMIs. One worked as a WDM device and the other worked as a wavelength filter.
We experimentally demonstrated a novel SOI based 4-channel coarse wavelength demultiplexer with tilted in/output MMI structure. It has an FSR of ∼100nm, a cross talk of <−20dB and an insertion loss of only 1∼3dB.
Many fibre-optic telecommunications systems exploit the spectral ‘window’ at 1310 nm, which corresponds to zero dispersion in standard single-mode fibres (SMFs). In particular, several passive optical network (PON) architectures use 1310nm for upstream signals,1 and so compact, low-cost and low-power modulators operating at 1310 nm that can be integrated into Si electronic-photonic integrated circuits...
This paper demonstrates the integration of Au nanocrystals (NCs) into nonvolatile metal-oxide-semiconductor (MOS) with a hybrid method operated at room temperature. The comparison of structural and electrical characteristics between the hybrid Au NCs fabricated by chemical syntheses and film deposition Au NCs fabricated by rapid thermal annealing (RTA) was carried out. The size of the Au NCs formed...
The surface of Si(111) exposed to NH 3 or NO is analyzed with scanning tunneling microscopy, low-energy electron diffraction (LEED), Auger electron spectroscopy, and transmission electron microscopy. Crystalline silicon nitride thin films are formed on Si(111) after nitridation at T>1075 K. Corresponding to the 8x8 LEED pattern, a 30.7-Åperiodic superstructure is observed. The film thickness...
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