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In this article, we first fabricate and demonstrate the InGaP/GaAs camel-like gate field-effect transistor with InGaAs pseudomorphic heavy-doped channel. Due to the large gate potential barrier for the use of the n+-GaAs/p+-InGaP/n-GaAs camel-like gate and the thin as well as heavy doping n+-InGaAs channel layer, the effective conduction band discontinuity (ΔEc) is substantially extended and a high...
In this article, the performance of a novel InGaP/GaAs superlattice-emitter bipolar transistor with InGaAs/GaAs superlattice-base structure is demonstrated by experimental results. The injecting electrons from superlattice emitter are easy to transport into the superlattice-base region for promoting the collector current by tunneling behavior. Furthermore, the average energy gap of base regime is...
The electrostatic discharge (ESD) characteristics of GaN-based light-emitting diodes (LEDs) with naturally textured p-GaN contact layers grown on c-axis miscut sapphire substrates are studied and demonstrated. Based on the machine model, the device grown on a 0.35° miscut sapphire shows the highest ESD tolerance, whereas the device grown on a 0.2° miscut sapphire exhibits the poorest tolerance. It...
A GaAs-InGaAs optoelectronic switch, grown by molecular beam epitaxy (MBE), has been fabricated. Owing to the avalanche multiplication and hole accumulation in the transport mechanism, bistable states, i.e., a high-impedance OFF state and a low-impedance ON state, are observed in the current-voltage (I-V) characteristics. The device shows a flexible optical function related to the potential barrier...
A new Pt-InAlP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor with high-sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30degC, the relatively hydrogen detection ratio Sr value is increased from 108.8% (107...
The characteristics and device mechanism of InP/InGaAs pnp δ-doped heterojunction bipolar transistor are demonstrated. The additions of a δ-doped sheet and two spacer layers efficiently eliminate the potential spike at emitter-base junction, lower the emitter-collector offset voltage, and increase the confinement effect for electrons, simultaneously. The components of base current and the influence...
Two-terminal switching performance is observed in a new AlGaAs/GaAs/InAlGaP optoelectronic device. The device shows that the switching action takes place from a low current state to a high current state through a region of negative differential resistance (NDR). The transition from either state to the other may be induced by an appropriate optical or electrical input. It is seen that the effect of...
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