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This paper evaluates the degradation process in nMOSFETs with HfO2 gate dielectric and interfacial layer (IL) by 3D Kinetic Monte-Carlo (KMC) method considering multi-trap coupling. The degradation and corresponding trap evolution in a 1-nm EOT dielectric stack with different thicknesses of SiO2 IL is simulated under different gate biases (Vg) and temperature (T). The results indicate that IL can...
This paper presents coupling characteristics of multiple traps in HKMG nMOSFETs by a 3D kinetic Monte-Carlo (KMC) simulator we developed, which includes several fully-coupled multi-physical models: trap generation/recombination, trapping/detrapping to/from channel, metal gate, and the interaction of traps. It shows that activation energy and trapping/detrapping from/to channel/gate impact on coupling...
A comprehensive time dependent three dimensional simulation framework for high-k degradation is developed. In this framework, the models that account for trap generation in high-k, capture/emission dynamic, and statistical variability are incorporated in the simulation. The influence of the trap generation model on distribution of traps, threshold voltage, and the amount of trapped charge is investigated...
A Constant-gm CMOS op-amp with Rail-to-Rail input and output stage is proposed in this paper. It is based on a novel configuration that consists of four MOSFETS as dummy differential pairs to select different differential pair as input pair, according to the different common-mode voltage. The constant gm is accomplished by avoiding the input NMOS and PMOS differential pairs operating synchronously,...
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