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We present a fully integrated auto-transformer-based power amplifier with totem-pole driver exhibiting a very high bandwidth. In order to simplify the design process a structural analysis and optimization method for the transformer are presented as well as an analytical method to ensure the optimum load line at the transistor. The circuit was implemented in a 0.25 μm SiGe BiCMOS technology and was...
Conventional Doherty power amplifiers need a λ/4 transmission line at the input of the peak amplifier. This provides a 90 degree phase shift of the input signal to allow a phase correct combination at the output. In this paper a discrete Doherty power amplifier for 2GHz LTE band is introduced that comes with a phase shifter at the peak amplifier's input with 110 degree. It shows a 2.5% points higher...
In this paper, a fully integrated Doherty power amplifier (DPA) for application in IEEE 802.11a wireless local area network (WLAN) transmitters is proposed. The DPA exhibits an output power at its 1 dB compression point of 22 dBm with a corresponding power added efficieny (PAE) of 25 %. Within a 6dB-backoff the PAE is still 20 %, which among the highest reported for Doherty amplifiers fully integrated...
This paper demonstrates a fully integrated Doherty power amplifier for the LTE standard. The Doherty power amplifier is fully integrated adopting a 0.25 µm SiGe BiCMOS technology. The quarter wave transmission line is implemented by lumped element components to save chip area. By combining the phase compensation network with the input matching network of the peak amplifier, the required inductor number...
This paper demonstrates a fully integrated power amplifier for long term evolution (LTE) applications. The power amplifier is adopting a tuning capacitor in parallel with the choke inductor, which reduces the DC power consumption of the inductor and decreases the chip size. The total power added efficiency (PAE) is enhanced as a result. The proposed power amplifier is manufactured using a 0.25 μm...
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