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Based on three-dimensional (3D) Fourier heat flow equation and numerical simulation, we investigated thermal crosstalk of resistive switching memory in 3D crossbar structure for the first time. Our results show that the transient thermal effect will dominate reset process. With the decrease of RS device size, the thermal crosstalk would remarkably deteriorate the retention of RS memory device and...
A 32 nm logic technology for high performance microprocessors is described. 2nd generation high-k + metal gate transistors provide record drive currents at the tightest gate pitch reported for any 32 nm or 28 nm logic technology. NMOS drive currents are 1.62 mA/um Idsat and 0.231 mA/um Idlin at 1.0 V and 100 nA/um Ioff. PMOS drive currents are 1.37 mA/um Idsat and 0.240 mA/um Idlin at 1.0 V and 100...
A novel protection device providing ultra-low line capacitance and improved ESD (J. E. Vinson et al., 2003) and surge capability is presented. Applications include stand-alone protection arrays and integrated protection in baseband- or RF-filters. A proprietary epitaxial layer and isolation capability enable high levels of surge power handling capability, while keeping line capacitance low and reducing...
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